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SI4101DY-T1-GE3
the part number is SI4101DY-T1-GE3
Part
SI4101DY-T1-GE3
Manufacturer
Description
MOSFET P-CH 30V 25.7A 8SO
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $0.8526 $0.8355 $0.81 $0.7844 $0.7503 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 203 nC @ 10 V
FETFeature 6W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-SOIC
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage 8-SOIC (0.154, 3.90mm Width)
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 25.7A (Tc)
Vgs(Max) 8190 pF @ 15 V
MinRdsOn) 6mOhm @ 15A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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