| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 20mOhm @ 9.1A, 4.5V |
|---|---|
| Vgs(th)(Max)@Id | 17nC @ 4.5V |
| Vgs | 1.5V @ 250µA |
| Configuration | N and P-Channel, Common Drain |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| OperatingTemperature | Surface Mount |
| ProductStatus | Obsolete |
| Package/Case | 8-SOIC |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | 8-SOIC (0.154, 3.90mm Width) |
| InputCapacitance(Ciss)(Max)@Vds | 1.3W |
| Series | - |
| Qualification | |
| SupplierDevicePackage | |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 6.6A, 3.8A |
| Package | Cut Tape (CT),Digi-Reel® |
| Power-Max | - |
VISHAY
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!