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SI7101DN-T1-GE3
the part number is SI7101DN-T1-GE3
Part
SI7101DN-T1-GE3
Manufacturer
Description
MOSFET P-CH 30V 35A PPAK 1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.032 $1.0114 $0.9804 $0.9494 $0.9082 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage -1.2 V
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 8 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) -30 V
Drain to Source Resistance 5.8 mΩ
Number of Channels 1
Number of Pins 8
Height 1.12 mm
Number of Elements 1
Input Capacitance 3.595 nF
Lead Free Lead Free
Rds On Max 7.2 mΩ
Max Power Dissipation 52 W
Max Junction Temperature (Tj) 150 °C
Drain to Source Breakdown Voltage -30 V
Gate to Source Voltage (Vgs) 25 V
REACH SVHC No SVHC
Turn-On Delay Time 12 ns
Max Operating Temperature 150 °C
Power Dissipation 3.7 W
Continuous Drain Current (ID) -35 A
Rise Time 10 ns
Turn-Off Delay Time 38 ns
Packaging Digi-Reel®
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