shengyuic
shengyuic
SI7102DN-T1-GE3
the part number is SI7102DN-T1-GE3
Part
SI7102DN-T1-GE3
Manufacturer
Description
QFN8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Min Operating Temperature -50 °C
Threshold Voltage 400 mV
Mount Surface Mount
Fall Time 12 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 12 V
Drain to Source Resistance 3.8 mΩ
Element Configuration Single
Number of Channels 1
Number of Pins 8
Height 1.04 mm
Number of Elements 1
Input Capacitance 3.72 nF
Width 3.3 mm
Lead Free Lead Free
Rds On Max 3.8 mΩ
Max Power Dissipation 52 W
Drain to Source Breakdown Voltage 12 V
Nominal Vgs 400 mV
Gate to Source Voltage (Vgs) 8 V
REACH SVHC Unknown
Turn-On Delay Time 27 ns
Resistance 3.8 mΩ
Max Operating Temperature 150 °C
Power Dissipation 3.8 W
Continuous Drain Current (ID) 35 A
Rise Time 125 ns
Length 3.3 mm
Turn-Off Delay Time 53 ns
Related Parts For SI7102DN-T1-GE3
SI7100DN-T1-E3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK1212-8

SI7100DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay

MOSFET P-CH 30V 35A PPAK 1212-8

SI7101DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 35A PPAK 1212-8

SI7102DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

SI7102DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK1212-8

SI7104DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!