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SI8800EDB-T2-E1
the part number is SI8800EDB-T2-E1
Part
SI8800EDB-T2-E1
Manufacturer
Description
MOSFET N-CH 20V 4MICROFOOT
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.522 $0.5116 $0.4959 $0.4802 $0.4594 Get Quotation!
Specification
RdsOn(Max)@Id 1V @ 250µA
Vgs(th)(Max)@Id ±8V
Vgs 8.3 nC @ 8 V
FETFeature 500mW (Ta)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 1.5V, 4.5V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 4-Microfoot
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage 4-XFBGA, CSPBGA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 2A (Ta)
Vgs(Max) -
MinRdsOn) 80mOhm @ 1A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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