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SI8809EDB-T2-E1
the part number is SI8809EDB-T2-E1
Part
SI8809EDB-T2-E1
Manufacturer
Description
MOSFET P-CH 20V 1.9A MICROFOOT
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 900mV @ 250µA
Vgs(th)(Max)@Id ±8V
Vgs 15 nC @ 8 V
FETFeature 500mW (Ta)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 1.8V, 4.5V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 4-Microfoot
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage 4-XFBGA
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 1.94 (Ta)
Vgs(Max) -
MinRdsOn) 90mOhm @ 1.5A, 4.5V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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