shengyuic
shengyuic
SIE804DF-T1-GE3
the part number is SIE804DF-T1-GE3
Part
SIE804DF-T1-GE3
Manufacturer
Description
MOSFET N-CH 150V 37A 10POLARPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 105 nC @ 10 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 150 V
OperatingTemperature 10-PolarPAK® (LH)
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType 10-PolarPAK® (LH)
InputCapacitance(Ciss)(Max)@Vds 5.2W (Ta), 125W (Tc)
Series TrenchFET®
Qualification
SupplierDevicePackage 3000 pF @ 50 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 37A (Tc)
Vgs(Max) -
MinRdsOn) 38mOhm @ 7.6A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) Surface Mount
Related Parts For SIE804DF-T1-GE3
SIE800DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 50A 10POLARPAK

SIE800DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 50A 10POLARPAK

SIE802DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 60A 10POLARPAK

SIE802DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 60A 10POLARPAK

SIE804DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 150V 37A 10POLARPAK

SIE806DF-T1-E3

Vishay

MOSFET N-CH 30V 60A 10-POLARPAK

SIE808DF-T1-E3

Vishay

MOSFET N-CH 20V 60A 10-POLARPAK

SIE808DF-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 60A 10POLARPAK

SIE808DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 60A 10POLARPAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!