shengyuic
shengyuic
SIE806DF-T1-E3
the part number is SIE806DF-T1-E3
Part
SIE806DF-T1-E3
Manufacturer
Description
MOSFET N-CH 30V 60A 10-POLARPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.57 $1.5386 $1.4915 $1.4444 $1.3816 Get Quotation!
Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 30 V
Gate to Source Voltage (Vgs) 12 V
Threshold Voltage 1.3 V
REACH SVHC No SVHC
Mount Surface Mount
Fall Time 10 ns
RoHS Compliant
Radiation Hardening No
Resistance 1.7 mΩ
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) 30 V
Power Dissipation 5.2 W
Drain to Source Resistance 1.7 mΩ
Continuous Drain Current (ID) 41.3 A
Element Configuration Single
Rise Time 50 ns
Turn-Off Delay Time 85 ns
Number of Pins 10
Number of Elements 1
Input Capacitance 13 nF
Lead Free Lead Free
Rds On Max 1.7 mΩ
Max Power Dissipation 125 W
Related Parts For SIE806DF-T1-E3
SIE800DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 50A 10POLARPAK

SIE800DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 50A 10POLARPAK

SIE802DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 60A 10POLARPAK

SIE802DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 60A 10POLARPAK

SIE804DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 150V 37A 10POLARPAK

SIE806DF-T1-E3

Vishay

MOSFET N-CH 30V 60A 10-POLARPAK

SIE808DF-T1-E3

Vishay

MOSFET N-CH 20V 60A 10-POLARPAK

SIE808DF-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 60A 10POLARPAK

SIE808DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 60A 10POLARPAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!