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SIE820DF-T1-E3
the part number is SIE820DF-T1-E3
Part
SIE820DF-T1-E3
Manufacturer
Description
MOSFET N-CH 20V 50A 10-POLARPAK
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 20V
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Supplier Device Package: 10-PolarPAK® (S)
Vgs(th) (Max) @ Id: 2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Other Names: SIE820DF-T1-E3CT SIE820DFT1E3
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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