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SIRA00DP-T1-GE3
the part number is SIRA00DP-T1-GE3
Part
SIRA00DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 100A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $2.1 $2.058 $1.995 $1.932 $1.848 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage 1.1 V
Schedule B 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 11 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 30 V
Drain to Source Resistance 1 mΩ
Element Configuration Single
Number of Channels 1
Number of Pins 8
Height 1.07 mm
Number of Elements 1
Input Capacitance 11.7 nF
Width 5 mm
Lead Free Lead Free
Rds On Max 1 mΩ
Max Power Dissipation 104 W
Drain to Source Breakdown Voltage 30 V
Nominal Vgs 1.1 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC Unknown
Turn-On Delay Time 18 ns
Weight 506.605978 mg
Resistance 4 mΩ
Max Operating Temperature 150 °C
Power Dissipation 6.25 W
Continuous Drain Current (ID) 60 A
Rise Time 14 ns
Length 5.99 mm
Turn-Off Delay Time 67 ns
Contact Plating Tin
Packaging Tape and Reel
Case/Package SOIC
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