shengyuic
shengyuic
SIRA01DP-T1-GE3
the part number is SIRA01DP-T1-GE3
Part
SIRA01DP-T1-GE3
Manufacturer
Description
MOSFET P-CH 30V 26A/60A PPAK SO8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.2342 $1.2095 $1.1725 $1.1355 $1.0861 Get Quotation!
Specification
RdsOn(Max)@Id 2.2V @ 250µA
Vgs(th)(Max)@Id +16V, -20V
Vgs 112 nC @ 10 V
FETFeature 5W (Ta), 62.5W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature -
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case PowerPAK® SO-8
GateCharge(Qg)(Max)@Vgs PowerPAK® SO-8
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET® Gen IV
Qualification
SupplierDevicePackage Surface Mount
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 26A (Ta), 60A (Tc)
Vgs(Max) 3490 pF @ 15 V
MinRdsOn) 4.9mOhm @ 15A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SIRA01DP-T1-GE3
SIRA00DP-T1-GE3

Vishay

MOSFET N-CH 30V 100A PPAK SO-8

SIRA00DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 100A PPAK SO-8

SIRA00DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 30V 100A PPAK SO-8

SIRA01DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 26A/60A PPAK SO8

SIRA02DP-T1-GE3

Vishay

MOSFET N-CH 30V 50A PPAK SO-8

SIRA02DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!