| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.8748 | $0.8573 | $0.8311 | $0.8048 | $0.7698 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 5W (Ta), 43W (Tc) |
| Package / Case: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | PowerPAK® SO-8 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 42 Weeks |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | TrenchFET® Gen IV |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Ta), 60A (Tc) |
| Other Names: | SIRA10BDP-T1-GE3TR |
| Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 15V |
| Vgs (Max): | +20V, -16V |
| Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 10A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 36.2nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!