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SIRA18DDP-T1-GE3
the part number is SIRA18DDP-T1-GE3
Part
SIRA18DDP-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 9A PPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
RdsOn(Max)@Id 2.4V @ 250µA
Vgs(th)(Max)@Id +20V, -16V
Vgs 19 nC @ 10 V
FETFeature 3.8W (Ta), 17W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage PowerPAK® SO-8
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 19A (Ta), 40A (Tc)
Vgs(Max) 670 pF @ 15 V
MinRdsOn) 6.83mOhm @ 10A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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