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SIRA20DP-T1-RE3
the part number is SIRA20DP-T1-RE3
Part
SIRA20DP-T1-RE3
Manufacturer
Description
MOSFET N-CHAN 25V POWERPAK SO-8
Lead Free/ROHS
pb RoHs
Datasheets
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Pricing
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Uni Price $1.6264 $1.5939 $1.5451 $1.4963 $1.4312 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 25V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 32 Weeks
Email: [email protected]
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
Other Names: SIRA20DP-T1-RE3CT
Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 10V
Vgs (Max): +16V, -12V
Rds On (Max) @ Id, Vgs: 0.58 mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
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