1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $1.6264 | $1.5939 | $1.5451 | $1.4963 | $1.4312 | Get Quotation! |
Drain to Source Voltage (Vdss): | 25V |
---|---|
Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
Package / Case: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Packaging: | Cut Tape (CT) |
Supplier Device Package: | PowerPAK® SO-8 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 32 Weeks |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | TrenchFET® |
Current - Continuous Drain (Id) @ 25°C: | 81.7A (Ta), 100A (Tc) |
Other Names: | SIRA20DP-T1-RE3CT |
Input Capacitance (Ciss) (Max) @ Vds: | 10850pF @ 10V |
Vgs (Max): | +16V, -12V |
Rds On (Max) @ Id, Vgs: | 0.58 mOhm @ 20A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!