| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.43 | $0.4214 | $0.4085 | $0.3956 | $0.3784 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Threshold Voltage | 3 V |
| Fall Time | 12 ns |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | 650 V |
| Drain to Source Resistance | 3 Ω |
| Element Configuration | Single |
| Number of Pins | 3 |
| Input Capacitance | 200 pF |
| Lead Free | Lead Free |
| Rds On Max | 3 Ω |
| Max Power Dissipation | 25 W |
| Drain to Source Breakdown Voltage | 600 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Current Rating | 1.8 A |
| Turn-On Delay Time | 6 ns |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 25 W |
| Continuous Drain Current (ID) | 1.8 A |
| Rise Time | 3 ns |
| Turn-Off Delay Time | 68 ns |
| Halogen Free | Halogen Free |
| Voltage Rating (DC) | 650 V |
| Case/Package | TO-263-3 |
Infineon
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!