| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 3.9V @ 80µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 12.5 nC @ 10 V |
| FETFeature | 25W (Tc) |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | PG-TO263-3-2 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | CoolMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 1.8A (Tc) |
| Vgs(Max) | 200 pF @ 25 V |
| MinRdsOn) | 3Ohm @ 1.1A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!