| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 60V |
|---|---|
| Power Dissipation (Max): | 42W (Tc) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | PG-TO263-3-2 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Detailed Description: | P-Channel 60V 8.8A (Ta) 42W (Tc) Surface Mount PG-TO263-3-2 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | P-Channel |
| Series: | SIPMOS® |
| Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta) |
| Other Names: | SP000012508 SPB08P06PT |
| Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 6.2A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
Infineon
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!