| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.7584 | $1.7232 | $1.6705 | $1.6177 | $1.5474 | Get Quotation! |
| RdsOn(Max)@Id | 3.5V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 145 nC @ 10 V |
| FETFeature | 157W (Tc) |
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | Automotive |
| GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
| Grade | |
| MountingType | TO-263 (D2PAK) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | TrenchFET® |
| Qualification | |
| SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| Vgs(Max) | 7910 pF @ 25 V |
| MinRdsOn) | 2.7mOhm @ 30A, 10V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
VISHAY
TRANSISTOR 100 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!