| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 40 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Mount | Surface Mount |
| Fall Time | 9 ns |
| Turn-On Delay Time | 14 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Max Operating Temperature | 175 °C |
| Drain to Source Voltage (Vdss) | 40 V |
| Power Dissipation | 157 W |
| Drain to Source Resistance | 3 mΩ |
| Continuous Drain Current (ID) | 100 A |
| Element Configuration | Single |
| Rise Time | 11 ns |
| Turn-Off Delay Time | 48 ns |
| Number of Pins | 3 |
| Input Capacitance | 7.91 nF |
| Lead Free | Lead Free |
| Rds On Max | 3 mΩ |
| Case/Package | TO-263-3 |
| Max Power Dissipation | 157 W |
VISHAY
TRANSISTOR 100 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!