1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $4.0221 | $3.9417 | $3.821 | $3.7003 | $3.5394 | Get Quotation! |
Drain to Source Voltage (Vdss): | 100V |
---|---|
Power Dissipation (Max): | 375W (Tc) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | TO-263 (D²Pak) |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak) |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | Automotive, AEC-Q101, TrenchFET® |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Other Names: | SQM120N10-3M8_GE3TR |
Input Capacitance (Ciss) (Max) @ Vds: | 7230pF @ 25V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
VISHAY
TRANSISTOR 100 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!