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SQM120N10-3M8_GE3
the part number is SQM120N10-3M8_GE3
Part
SQM120N10-3M8_GE3
Manufacturer
Description
MOSFET N-CH 100V 120A TO263
Lead Free/ROHS
pb RoHs
Datasheets
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Pricing
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Uni Price $4.0221 $3.9417 $3.821 $3.7003 $3.5394 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: Automotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Other Names: SQM120N10-3M8_GE3TR
Input Capacitance (Ciss) (Max) @ Vds: 7230pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
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