| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | -55°C ~ 150°C (TJ) |
|---|---|
| Vgs(th)(Max)@Id | 8A (Tc) |
| Vgs | Through Hole |
| FETFeature | 5V @ 100µA |
| DraintoSourceVoltage(Vdss) | 800 V |
| OperatingTemperature | ±30V |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-281 (I2PAKFP) |
| InputCapacitance(Ciss)(Max)@Vds | 630mOhm @ 4A, 10V |
| Series | MDmesh™ K5 |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Full Pack, I2PAK |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 427 pF @ 100 V |
| Vgs(Max) | 10V |
| MinRdsOn) | 20W (Tc) |
| Package | Tube |
| PowerDissipation(Max) | 15 nC @ 10 V |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
