1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $2.0008 | $1.9608 | $1.9008 | $1.8407 | $1.7607 | Get Quotation! |
RdsOn(Max)@Id | 4.5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 70 nC @ 10 V |
FETFeature | 35W (Tc) |
DraintoSourceVoltage(Vdss) | 600 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | TO-281 (I2PAKFP) |
GateCharge(Qg)(Max)@Vgs | TO-262-3 Full Pack, I2PAK |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | SuperMESH™ |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
Vgs(Max) | 1370 pF @ 25 V |
MinRdsOn) | 750mOhm @ 4.5A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!