| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $4.5313 | $4.4407 | $4.3047 | $4.1688 | $3.9875 | Get Quotation! |
| RdsOn(Max)@Id | 5V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±25V |
| Vgs | 45 nC @ 10 V |
| FETFeature | 30W (Tc) |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-281 (I2PAKFP) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | MDmesh™ V |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Full Pack, I2PAK |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| Vgs(Max) | 1865 pF @ 100 V |
| MinRdsOn) | 148mOhm @ 11A, 10V |
| Package | Tube |
| PowerDissipation(Max) | 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
