shengyuic
shengyuic
TW015Z120C,S1F
the part number is TW015Z120C,S1F
Part
TW015Z120C,S1F
Description
G3 1200V SIC-MOSFET TO-247-4L 1
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $67.463 $66.1137 $64.0898 $62.066 $59.3674 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 11.7mA
Vgs(th)(Max)@Id 6000 pF @ 800 V
Vgs 158 nC @ 18 V
FETFeature 175°C
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature -
DriveVoltage(MaxRdsOn 18V
ProductStatus Active
Package/Case TO-247-4
GateCharge(Qg)(Max)@Vgs +25V, -10V
Grade
MountingType Through Hole
InputCapacitance(Ciss)(Max)@Vds 431W (Tc)
Series -
Qualification
SupplierDevicePackage TO-247-4L(X)
FETType N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C 100A (Tc)
Vgs(Max) -
MinRdsOn) 21mOhm @ 50A, 18V
Package Tube
PowerDissipation(Max) -
Related Parts For TW015Z120C,S1F
TW015N120C,S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 15MO

TW015N65C,S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 15MOH

TW015Z120C,S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 1

TW015Z65C,S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 15

TW0162C

TST

156.25/30/50OHM/3.3/7.0X5.0

TW01BLK1

APEM Inc.

SWITCH THUMBWHEEL HALL EFFECT

TW01GRY1

APEM Inc.

SWITCH THUMBWHEEL HALL EFFECT

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!