1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $67.463 | $66.1137 | $64.0898 | $62.066 | $59.3674 | Get Quotation! |
RdsOn(Max)@Id | 5V @ 11.7mA |
---|---|
Vgs(th)(Max)@Id | 6000 pF @ 800 V |
Vgs | 158 nC @ 18 V |
FETFeature | 175°C |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | TO-247-4 |
GateCharge(Qg)(Max)@Vgs | +25V, -10V |
Grade | |
MountingType | Through Hole |
InputCapacitance(Ciss)(Max)@Vds | 431W (Tc) |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-4L(X) |
FETType | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 21mOhm @ 50A, 18V |
Package | Tube |
PowerDissipation(Max) | - |
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