| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $57.1077 | $55.9655 | $54.2523 | $52.5391 | $50.2548 | Get Quotation! |
| RdsOn(Max)@Id | 5V @ 11.7mA |
|---|---|
| Vgs(th)(Max)@Id | 4850 pF @ 400 V |
| Vgs | 128 nC @ 18 V |
| FETFeature | 175°C |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | 18V |
| ProductStatus | Active |
| Package/Case | TO-247-4 |
| GateCharge(Qg)(Max)@Vgs | +25V, -10V |
| Grade | |
| MountingType | Through Hole |
| InputCapacitance(Ciss)(Max)@Vds | 342W (Tc) |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-4L(X) |
| FETType | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| Vgs(Max) | - |
| MinRdsOn) | 22mOhm @ 50A, 18V |
| Package | Tube |
| PowerDissipation(Max) | - |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!