| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | - |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | - |
| FETFeature | 47W (Tc) |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-257 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-257-3 |
| FETType | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) (165°C) |
| Vgs(Max) | 324 pF @ 35 V |
| MinRdsOn) | 415mOhm @ 4A |
| Package | Bulk |
| PowerDissipation(Max) | -55°C ~ 225°C (TJ) |
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