1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | - |
---|---|
Vgs(th)(Max)@Id | 1534 pF @ 35 V |
Vgs | - |
FETFeature | -55°C ~ 225°C (TJ) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | TO-276 |
DriveVoltage(MaxRdsOn | - |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-276AA |
InputCapacitance(Ciss)(Max)@Vds | 330W (Tc) |
Series | - |
Qualification | |
SupplierDevicePackage | - |
FETType | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Current-ContinuousDrain(Id)@25°C | 16A (Tc) (155°C) |
Vgs(Max) | - |
MinRdsOn) | 105mOhm @ 16A |
Package | Bulk |
PowerDissipation(Max) | Surface Mount |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!