1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | - |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | - |
FETFeature | 200W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | - |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-276 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-276AA |
FETType | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Current-ContinuousDrain(Id)@25°C | 8A (Tc) (158°C) |
Vgs(Max) | 720 pF @ 35 V |
MinRdsOn) | 170mOhm @ 8A |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 225°C (TJ) |
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