1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $4.15 | $4.067 | $3.9425 | $3.818 | $3.652 | Get Quotation! |
RdsOn(Max)@Id | 3.5V @ 1.2mA |
---|---|
Vgs(th)(Max)@Id | +15V, -5V |
Vgs | 12 nC @ 15 V |
FETFeature | 44W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 15V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Current-ContinuousDrain(Id)@25°C | 6.3A (Tc) |
Vgs(Max) | 206 pF @ 800 V |
MinRdsOn) | 675mOhm @ 1.2A, 15V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!