| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $6.6878 | $6.554 | $6.3534 | $6.1528 | $5.8853 | Get Quotation! |
| RdsOn(Max)@Id | 3.8V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 59 nC @ 10 V |
| FETFeature | 520W (Tc) |
| DraintoSourceVoltage(Vdss) | 600 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Not For New Designs |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | aMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 53A (Tc) |
| Vgs(Max) | 3034 pF @ 100 V |
| MinRdsOn) | 70mOhm @ 26.5A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!