1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Drain to Source Voltage (Vdss): | 600V |
---|---|
Power Dissipation (Max): | 520W (Tc) |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Packaging: | Tube |
Supplier Device Package: | TO-247 |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 600V 53A (Tc) 520W (Tc) Through Hole TO-247 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 26 Weeks |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | aMOS™ |
Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds: | 3034pF @ 100V |
Vgs (Max): | ±30V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 26.5A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!