1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $547.6548 | $536.7017 | $520.2721 | $503.8424 | $481.9362 | Get Quotation! |
RdsOn(Max)@Id | 5.6V @ 80mA |
---|---|
Vgs(th)(Max)@Id | +22V, -4V |
Vgs | - |
FETFeature | 1360W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Chassis Mount |
DriveVoltage(MaxRdsOn | - |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | Module |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Module |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 300A (Tc) |
Vgs(Max) | 15000 pF @ 10 V |
MinRdsOn) | - |
Package | Bulk |
PowerDissipation(Max) | -40°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!