| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $991.6962 | $971.8623 | $942.1114 | $912.3605 | $872.6927 | Get Quotation! |
| RdsOn(Max)@Id | 5.6V @ 80mA |
|---|---|
| Vgs(th)(Max)@Id | +22V, -4V |
| Vgs | - |
| FETFeature | 1360W (Tc) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | Module |
| InputCapacitance(Ciss)(Max)@Vds | Standard |
| Series | - |
| Qualification | |
| SupplierDevicePackage | Module |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 300A (Tc) |
| Vgs(Max) | 1500 pF @ 10 V |
| MinRdsOn) | - |
| Package | Bulk |
| PowerDissipation(Max) | -40°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!