shengyuic
shengyuic
BSM300D12P3E005
the part number is BSM300D12P3E005
Part
BSM300D12P3E005
Manufacturer
Description
SIC 2N-CH 1200V 300A MODULE
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1308.7983 $1282.6223 $1243.3584 $1204.0944 $1151.7425 Get Quotation!
Specification
RdsOn(Max)@Id -
Vgs(th)(Max)@Id -
Vgs 5.6V @ 91mA
Configuration 2 N-Channel (Half Bridge)
FETFeature -
DraintoSourceVoltage(Vdss) 1200V (1.2kV)
OperatingTemperature Module
ProductStatus Active
Package/Case Chassis Mount
GateCharge(Qg)(Max)@Vgs 14000pF @ 10V
Grade -
MountingType Module
InputCapacitance(Ciss)(Max)@Vds 1260W (Tc)
Series -
Qualification
SupplierDevicePackage -
Technology Silicon Carbide (SiC)
Current-ContinuousDrain(Id)@25°C 300A (Tc)
Package Bulk
Power-Max -40°C ~ 150°C (TJ)
Related Parts For BSM300D12P3E005
BSM300

Brady Corporation

(RUG) BSM300 RUG, 36"X300'

BSM300C12P3E201

Rohm Semiconductor

SICFET N-CH 1200V 300A MODULE

BSM300C12P3E301

Rohm Semiconductor

SICFET N-CH 1200V 300A MODULE

BSM300D12P2E001

Rohm Semiconductor

SIC 2N-CH 1200V 300A MODULE

BSM300D12P3E005

Rohm Semiconductor

SIC 2N-CH 1200V 300A MODULE

BSM300D12P4G101

Rohm Semiconductor

SIC 2N-CH 1200V 291A MODULE

BSM300GA120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 570A 2250W

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!