1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 2.5V @ 1.2mA |
---|---|
Vgs(th)(Max)@Id | +6V, -5V |
Vgs | 2.8 nC @ 5 V |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 5V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | Die |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | eGaN® |
Qualification | |
SupplierDevicePackage | Die |
FETType | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Current-ContinuousDrain(Id)@25°C | 6A (Ta) |
Vgs(Max) | 205 pF @ 50 V |
MinRdsOn) | 30mOhm @ 6A, 5V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -40°C ~ 125°C (TJ) |
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