shengyuic
shengyuic
EPC2007C
the part number is EPC2007C
Part
EPC2007C
Manufacturer
EPC
Description
GANFET N-CH 100V 6A DIE OUTLINE
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.6442 $2.5913 $2.512 $2.4327 $2.3269 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 1.2mA
Vgs(th)(Max)@Id +6V, -4V
Vgs 2.2 nC @ 5 V
FETFeature -
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 5V
ProductStatus Not For New Designs
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType Die
InputCapacitance(Ciss)(Max)@Vds -
Series eGaN®
Qualification
SupplierDevicePackage Die
FETType N-Channel
Technology GaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C 6A (Ta)
Vgs(Max) 220 pF @ 50 V
MinRdsOn) 30mOhm @ 6A, 5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -40°C ~ 150°C (TJ)
Related Parts For EPC2007C
EPC200-CSP5

ESPROS Photonics AG

SENSOR PHOTODIODE 850NM 5XFBGA

EPC2001

EPC

GANFET N-CH 100V 25A DIE OUTLINE

EPC2001C

EPC

GANFET N-CH 100V 36A DIE OUTLINE

EPC2007

EPC

GANFET N-CH 100V 6A DIE OUTLINE

EPC2007C

EPC

GANFET N-CH 100V 6A DIE OUTLINE

EPC2010

EPC

GANFET N-CH 200V 12A DIE

EPC2010C

EPC

GANFET N-CH 200V 22A DIE OUTLINE

EPC2012

EPC

GANFET N-CH 200V 3A DIE

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!