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EPC2012
the part number is EPC2012
Part
EPC2012
Manufacturer
EPC
Description
GANFET N-CH 200V 3A DIE
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 2.5V @ 1mA
Vgs(th)(Max)@Id +6V, -5V
Vgs 1.8 nC @ 5 V
FETFeature -
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 5V
ProductStatus Discontinued at Digi-Key
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType Die
InputCapacitance(Ciss)(Max)@Vds -
Series eGaN®
Qualification
SupplierDevicePackage Die
FETType N-Channel
Technology GaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C 3A (Ta)
Vgs(Max) 145 pF @ 100 V
MinRdsOn) 100mOhm @ 3A, 5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -40°C ~ 125°C (TJ)
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