shengyuic
shengyuic
EPC2012C
the part number is EPC2012C
Part
EPC2012C
Manufacturer
EPC
Description
GANFET N-CH 200V 5A DIE OUTLINE
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.9784 $2.9188 $2.8295 $2.7401 $2.621 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 1mA
Vgs(th)(Max)@Id +6V, -4V
Vgs 1.3 nC @ 5 V
FETFeature -
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 5V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType Die
InputCapacitance(Ciss)(Max)@Vds -
Series eGaN®
Qualification
SupplierDevicePackage Die
FETType N-Channel
Technology GaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C 5A (Ta)
Vgs(Max) 140 pF @ 100 V
MinRdsOn) 100mOhm @ 3A, 5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -40°C ~ 150°C (TJ)
Related Parts For EPC2012C
EPC200-CSP5

ESPROS Photonics AG

SENSOR PHOTODIODE 850NM 5XFBGA

EPC2001

EPC

GANFET N-CH 100V 25A DIE OUTLINE

EPC2001C

EPC

GANFET N-CH 100V 36A DIE OUTLINE

EPC2007

EPC

GANFET N-CH 100V 6A DIE OUTLINE

EPC2007C

EPC

GANFET N-CH 100V 6A DIE OUTLINE

EPC2010

EPC

GANFET N-CH 200V 12A DIE

EPC2010C

EPC

GANFET N-CH 200V 22A DIE OUTLINE

EPC2012

EPC

GANFET N-CH 200V 3A DIE

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!