1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $20.128 | $19.7254 | $19.1216 | $18.5178 | $17.7126 | Get Quotation! |
RdsOn(Max)@Id | 5.7V @ 10mA |
---|---|
Vgs(th)(Max)@Id | +23V, -7V |
Vgs | 63 nC @ 18 V |
FETFeature | 227W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 15V, 18V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PG-TO247-4-1 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolSiC™ |
Qualification | |
SupplierDevicePackage | TO-247-4 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 56A (Tc) |
Vgs(Max) | 2120 pF @ 800 V |
MinRdsOn) | 40mOhm @ 25A, 18V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!