| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $22.678 | $22.2244 | $21.5441 | $20.8638 | $19.9566 | Get Quotation! |
| RdsOn(Max)@Id | 5.7V @ 10mA |
|---|---|
| Vgs(th)(Max)@Id | +20V, -10V |
| Vgs | 52 nC @ 15 V |
| FETFeature | 228W (Tc) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 15V |
| ProductStatus | Not For New Designs |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | PG-TO247-4-1 |
| InputCapacitance(Ciss)(Max)@Vds | Current Sensing |
| Series | CoolSiC™ |
| Qualification | |
| SupplierDevicePackage | TO-247-4 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 52A (Tc) |
| Vgs(Max) | 1900 pF @ 800 V |
| MinRdsOn) | 59mOhm @ 20A, 15V |
| Package | Tray |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
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