1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $13.4937 | $13.2238 | $12.819 | $12.4142 | $11.8745 | Get Quotation! |
RdsOn(Max)@Id | 5.7V @ 5.6mA |
---|---|
Vgs(th)(Max)@Id | +23V, -7V |
Vgs | 31 nC @ 18 V |
FETFeature | 150W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 15V, 18V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PG-TO247-4-1 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolSiC™ |
Qualification | |
SupplierDevicePackage | TO-247-4 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 36A (Tc) |
Vgs(Max) | 1060 pF @ 800 V |
MinRdsOn) | 78mOhm @ 13A, 18V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!