IPI100N04S4H2AKSA1

Part

IPI100N04S4H2AKSA1

Manufacturer

Infineon Technologies

Description

MOSFET N-CH 40V 100A TO262-3

Lead Free/ROHS

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Specification

RdsOn(Max)@Id	4V @ 70µA
Vgs(th)(Max)@Id	7180 pF @ 25 V
Vgs	±20V
FETFeature	-55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss)	40 V
OperatingTemperature	PG-TO262-3
DriveVoltage(MaxRdsOn	10V
ProductStatus	Obsolete
Package/Case	-
GateCharge(Qg)(Max)@Vgs	-
Grade
MountingType	TO-262-3 Long Leads, I2PAK, TO-262AA
InputCapacitance(Ciss)(Max)@Vds	115W (Tc)
Series	OptiMOS™
Qualification
SupplierDevicePackage	90 nC @ 10 V
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C	100A (Tc)
Vgs(Max)	-
MinRdsOn)	2.7mOhm @ 100A, 10V
Package	Tube
PowerDissipation(Max)	Through Hole

Related Parts For IPI100N04S4H2AKSA1

IPI100N04S3-03

INFINEON

Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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