IPI80CN10N G

Part

IPI80CN10N G

Manufacturer

Infineon Technologies

Description

MOSFET N-CH 100V 13A TO262-3

Lead Free/ROHS

Datasheets

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Specification

RdsOn(Max)@Id	4V @ 12µA
Vgs(th)(Max)@Id	±20V
Vgs	11 nC @ 10 V
FETFeature	31W (Tc)
DraintoSourceVoltage(Vdss)	100 V
OperatingTemperature	Through Hole
DriveVoltage(MaxRdsOn	10V
ProductStatus	Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType	PG-TO262-3
InputCapacitance(Ciss)(Max)@Vds	-
Series	OptiMOS™
Qualification
SupplierDevicePackage	TO-262-3 Long Leads, I2PAK, TO-262AA
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C	13A (Tc)
Vgs(Max)	716 pF @ 50 V
MinRdsOn)	80mOhm @ 13A, 10V
Package	Tube
PowerDissipation(Max)	-55°C ~ 175°C (TJ)

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