IPI80N03S4L03AKSA1

Part

IPI80N03S4L03AKSA1

Manufacturer

Infineon Technologies

Description

MOSFET N-CH 30V 80A TO262-3

Lead Free/ROHS

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Specification

RdsOn(Max)@Id	2.2V @ 90µA
Vgs(th)(Max)@Id	±16V
Vgs	140 nC @ 10 V
FETFeature	136W (Tc)
DraintoSourceVoltage(Vdss)	30 V
OperatingTemperature	Through Hole
DriveVoltage(MaxRdsOn	4.5V, 10V
ProductStatus	Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType	PG-TO262-3
InputCapacitance(Ciss)(Max)@Vds	-
Series	OptiMOS™
Qualification
SupplierDevicePackage	TO-262-3 Long Leads, I2PAK, TO-262AA
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C	80A (Tc)
Vgs(Max)	9750 pF @ 25 V
MinRdsOn)	2.7mOhm @ 80A, 10V
Package	Tube
PowerDissipation(Max)	-55°C ~ 175°C (TJ)

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