| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.35 | $1.323 | $1.2825 | $1.242 | $1.188 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 40 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Fall Time | 32 ns |
| Turn-On Delay Time | 26 ns |
| RoHS | Compliant |
| Max Dual Supply Voltage | 40 V |
| Max Operating Temperature | 175 °C |
| Drain to Source Voltage (Vdss) | 40 V |
| Power Dissipation | 300 W |
| Drain to Source Resistance | 3.7 mΩ |
| Continuous Drain Current (ID) | 80 A |
| Element Configuration | Single |
| Rise Time | 45 ns |
| Length | 10 mm |
| Turn-Off Delay Time | 56 ns |
| Halogen Free | Halogen Free |
| Number of Pins | 3 |
| Height | 9.25 mm |
| Input Capacitance | 5.3 nF |
| Width | 4.4 mm |
| Rds On Max | 3.7 mΩ |
| Case/Package | TO-262-3 |
| Max Power Dissipation | 300 W |
INFINEON
Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 80A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
