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Drain to Source Voltage (Vdss): | 40V |
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Power Dissipation (Max): | 200W (Tc) |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Packaging: | Tube |
Supplier Device Package: | TO-220AB |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Detailed Description: | N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-220AB |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | HEXFET® |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Other Names: | *IRL1004 |
Input Capacitance (Ciss) (Max) @ Vds: | 5330pF @ 25V |
Vgs (Max): | ±16V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 78A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 4.5V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Infineon
SVHC (20-Jun-2011); Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W
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