| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $2.79 | $2.7342 | $2.6505 | $2.5668 | $2.4552 | Get Quotation! |
| RdsOn(Max)@Id | 1V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±16V |
| Vgs | 100 nC @ 4.5 V |
| FETFeature | 200W (Tc) |
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-220AB |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | TO-220-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| Vgs(Max) | 5330 pF @ 25 V |
| MinRdsOn) | 6.5mOhm @ 78A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
SVHC (20-Jun-2011); Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!