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|---|---|---|---|---|---|---|
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| Drain to Source Voltage (Vdss): | 40V |
|---|---|
| Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type: | Surface Mount |
| Packaging: | Tube |
| Supplier Device Package: | D2PAK |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Detailed Description: | N-Channel 40V 130A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | HEXFET® |
| Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
| Other Names: | *IRL1004S |
| Input Capacitance (Ciss) (Max) @ Vds: | 5330pF @ 25V |
| Vgs (Max): | ±16V |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 78A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 4.5V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
Infineon
SVHC (20-Jun-2011); Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W
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