1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Min Operating Temperature | -55 °C |
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Gate to Source Voltage (Vgs) | 12 V |
Mount | Surface Mount |
Turn-On Delay Time | 7 ns |
RoHS | Non-Compliant |
Max Operating Temperature | 150 °C |
Drain to Source Resistance | 240 mΩ |
Continuous Drain Current (ID) | 1.5 A |
Element Configuration | Single |
Length | 2 mm |
Turn-Off Delay Time | 15 ns |
Number of Pins | 3 |
Height | 770 µm |
Input Capacitance | 80 pF |
Width | 1.7 mm |
Max Power Dissipation | 800 mW |
ROHM
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TUMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!