1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.5146 | $0.5043 | $0.4889 | $0.4734 | $0.4528 | Get Quotation! |
Drain to Source Voltage (Vdss): | 30V |
---|---|
Power Dissipation (Max): | 320mW (Ta) |
Package / Case: | 3-SMD, Flat Leads |
Mounting Type: | Surface Mount |
Packaging: | Tape & Reel (TR) |
Supplier Device Package: | TUMT3 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 30V 1.5A (Ta) 320mW (Ta) Surface Mount TUMT3 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | - |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Other Names: | RTF015N03TLTR |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 10V |
Vgs (Max): | ±12V |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 1.5A, 4.5V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 4.5V |
Operating Temperature: | 150°C (TJ) |
ROHM
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TUMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!